導波路レンズおよび光機能素子の構造およびその製造方法
文献类型：专利
| 作者 | 永井 豊; 三橋 豊 |
| 发表日期 | 1998-03-20 |
| 专利号 | JP2760006B2 |
| 著作权人 | 三菱電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 導波路レンズおよび光機能素子の構造およびその製造方法 |
| 英文摘要 | PURPOSE:To obtain the waveguide lens which can be easily formed on a semiconductor crystal used for an OEIC by forming the waveguide layer of a waveguide region and the active layer of a semiconductor laser respectively of superlattice layers diffusing an impurity into the waveguide layer to a lens shape to disorder the superlattice layers and forming mixed crystals. CONSTITUTION:The respective layers of a 1st AlGaAs clad layer 2, the superlattice layers 3 constituted by alternately laminating a number of GaAs well layers 7 having 10 to 200Angstrom film thickness and AlAs barrier layers 8 having 10 to 200Angstrom film thickness, and further a 2nd AlGaAs clad layer 4 are successive ly formed by crystal growth on a GaAs substrate The superlattice layers 3 particularly right under the impurity diffused region 5 are disordered and are converted to the mixed crystals by the impurity diffusion. The waveguide lens varies in the effective refractive index of the lens region made into the mixed crystals by the disordering and the superlattice layers to guided wave and, therefore, a lens effect is generated and the collimation of the laser light emitted from a semiconductor laser by utilizing this lens effect is possible. |
| 公开日期 | 1998-05-28 |
| 申请日期 | 1989-02-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42172]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三菱電機株式会社 |
| 推荐引用方式 GB/T 7714 | 永井 豊,三橋 豊. 導波路レンズおよび光機能素子の構造およびその製造方法. JP2760006B2. 1998-03-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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