Nitride semiconductor laser element
文献类型：专利
| 作者 | ITO, SHIGETOSHI; TSUDA, YUHZOH; UETA, YOSHIHIRO |
| 发表日期 | 2009-04-07 |
| 专利号 | US7515621 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Nitride semiconductor laser element |
| 英文摘要 | A nitride semiconductor laser element includes a lower clad layer, a lower adjacent layer, a quantum well active layer, an upper adjacent layer and an upper clad layer in this order. The quantum well active layer includes a plurality of well layers formed of undoped InGaN, and an undoped barrier layer sandwiched between the well layers. The barrier layer includes a first layer formed of InGaN, a second layer formed of GaN, and a third layer formed of InGaN. The In composition ratio of the first layer and the In composition ratio of the third layer are less than half the In composition ratio of the well layer. |
| 公开日期 | 2009-04-07 |
| 申请日期 | 2007-02-06 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42177]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | ITO, SHIGETOSHI,TSUDA, YUHZOH,UETA, YOSHIHIRO. Nitride semiconductor laser element. US7515621. 2009-04-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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