A method for the production of semiconductor devices
文献类型：专利
| 作者 | HOSODA, MASAHIRO; KONDO, MASAFUMI; SUYAMA, TAKAHIRO; SASAKI, KAZUAKI; TAKAHASHI, KOSEI; HAYAKAWA, TOSHIRO |
| 发表日期 | 1993-11-24 |
| 专利号 | EP0341034B1 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 欧洲专利局 |
| 文献子类 | 授权发明 |
| 其他题名 | A method for the production of semiconductor devices |
| 英文摘要 | A method for the production of semiconductor devices is disclosed which comprises the steps of growing a multi-layered structure comprising a plurality of epitaxial layers on a semiconductor substrate, resulting in a semiconductor wafer in which the semiconductor devices are formed on the substrate; forming striped grooves on the back face of the substrate, each of the striped grooves being positioned between the adjacent semiconductor devices; and dividing the semiconductor wafer along the striped grooves to separate the semiconductor devices. |
| 公开日期 | 1993-11-24 |
| 申请日期 | 1989-05-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42185]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | HOSODA, MASAHIRO,KONDO, MASAFUMI,SUYAMA, TAKAHIRO,et al. A method for the production of semiconductor devices. EP0341034B1. 1993-11-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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