Double-heterostructure semiconductor with mesa stripe waveguide
文献类型：专利
| 作者 | OHBA, YASUO; WATANABE, NIYOKO; SUGAWARA, HIDETO; ISHIKAWA, MASAYUKI; WATANABE, YUKIO; YAMAMOTO, MOTOYUKI |
| 发表日期 | 1990-08-14 |
| 专利号 | US4949349 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Double-heterostructure semiconductor with mesa stripe waveguide |
| 英文摘要 | A double-heterostructure semiconductor laser is disclosed which has a semiconductive substrate of a first conductivity type made of III-V compound semiconductor material, a first semiconductive cladding layer of the first conductivity type disposed above the substrate, an active layer made of a semiconductor film provided on said cladding layer to serve as a light emission layer, and a second semiconductive cladding layer of a second conductivity type provided on the active layer to define a light waveguide channel of the laser. The second cladding layer is made of a compound semiconductor containing indium, phosphorus, and aluminum. A contact layer section is provided on the second cladding layer to cover the light waveguide channel. The contact layer is made of a compound semiconductor material containing gallium and arsenic, and has a band gap discontinuity at a boundary region of the light waveguide channel to form a barrier which serves to effectively seal current carriers in the waveguide channel, while the laser is emitting a laser light. This contact layer may also serve as a current-blocking layer. |
| 公开日期 | 1990-08-14 |
| 申请日期 | 1988-12-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42191]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA |
| 推荐引用方式 GB/T 7714 | OHBA, YASUO,WATANABE, NIYOKO,SUGAWARA, HIDETO,et al. Double-heterostructure semiconductor with mesa stripe waveguide. US4949349. 1990-08-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。