分布帰還型半導体レ-ザ
文献类型：专利
| 作者 | 北村 光弘; 佐々木 達也; 水戸 郁夫 |
| 发表日期 | 1995-01-11 |
| 专利号 | JP1995001816B2 |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 分布帰還型半導体レ-ザ |
| 英文摘要 | PURPOSE:To produce an MQW-DFB laser high in coupling factor and excellent in active layer quality and in performance characteristics by a method wherein a superlattice guide layer is first grown on a diffraction grating and the guide layer surface is ensured to be flat even in a very thin design. CONSTITUTION:On an Inp substrate 1, a diffraction grating 2 is formed by laser interference exposure, whereon a superlattice guide layer 6, consisting of ten 80Angstrom thick InP barrier layers 7 and ten 30Angstrom -thick In0.53Ga0.47As well layers 8; an MQW active layer 4, consisting of eight 100Angstrom -thick InP barrier layers 9 and eight 100Angstrom -thick In0.53Ga0.47As well layers 10; and an Inp clad layer 5, are grown in that order. The effective emission wavelength composition of the superlattice guide layer 6 is equivalent to approximately 3mum, and that of the MQW active layer 4 is equivalent to approximately 55mum. In this example, the superlattice guide layer 6 is only 1100Angstrom thick, as measured from the ridge of the approximately 500Angstrom -thick diffraction grading 2. The surface involving the growth, however, is virtually flat. |
| 公开日期 | 1995-01-11 |
| 申请日期 | 1986-12-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42193]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | 北村 光弘,佐々木 達也,水戸 郁夫. 分布帰還型半導体レ-ザ. JP1995001816B2. 1995-01-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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