External-cavity tunable wavelength light source using semiconductor laser having phase adjustment area
文献类型：专利
| 作者 | OHTATEME, HIROAKI; ENDOH, HIROAKI; GOTO, HIROSHI; IKEUCHI, KO; ASAI, AKIHIKO |
| 发表日期 | 1996-11-26 |
| 专利号 | US5579327 |
| 著作权人 | ANRITSU CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | External-cavity tunable wavelength light source using semiconductor laser having phase adjustment area |
| 英文摘要 | In an external-cavity tunable wavelength light source using a semiconductor laser (LD), an oscillation wavelength is tuned by simultaneously changing a current to be injected to the phase adjustment area of the LD and the rotation angle of a diffraction grating while holding the same external cavity longitudinal mode. A light beam emitted from the AR-coated end face of the LD having the phase adjustment area is collimated by a lens and incident on the diffraction grating. Only a light component having a specific wavelength selected upon spectral dispersion is reflected by the diffraction grating and returns to the LD. With this operation, an external cavity (effective cavity length K) is formed between the LD and the diffraction grating, thereby performing laser oscillation at a wavelength determined by an external cavity longitudinal mode and the cavity loss of the diffraction grating. The effective cavity length K can be changed in accordance with the current to be injected to the phase adjustment area. A current injection unit injects the current to the phase adjustment area. An oscillation wavelength control unit controls the injection current output from the current injection unit and the rotation angle of the diffraction grating. |
| 公开日期 | 1996-11-26 |
| 申请日期 | 1995-06-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42195]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ANRITSU CORPORATION |
| 推荐引用方式 GB/T 7714 | OHTATEME, HIROAKI,ENDOH, HIROAKI,GOTO, HIROSHI,et al. External-cavity tunable wavelength light source using semiconductor laser having phase adjustment area. US5579327. 1996-11-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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