Semiconductor laser device and manufacturing method therefor
文献类型：专利
| 作者 | KINEI, SATOFUMI; HASHIMOTO, TAKAHIRO |
| 发表日期 | 2005-03-08 |
| 专利号 | US6865206 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device and manufacturing method therefor |
| 英文摘要 | There is provided a semiconductor laser device which is generally uniform in carrier concentration of a clad layer, almost free from strain, and less demanding for time and labor in its manufacturing, and which has stable characteristics. On an n-GaAs substrate, an n-type clad layer, an active layer, a p-type clad layer, and a cap layer are stacked one on another at a temperature of 700-750° C. Widthwise both side portions of the cap layer as well as widthwise both side specified-depth portions of the p-type clad layer are removed by etching to form a ridge portion, and a current constriction layer is formed on widthwise both sides of the ridge portion. A flattening layer having a planar surface is formed on the current constriction layer and the cap layer by slow cooling LPE process at a temperature of 700° C. or lower. On the flattening layer, a contact layer is formed by MOCVD process at a temperature of about 650° C. |
| 公开日期 | 2005-03-08 |
| 申请日期 | 2002-07-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42200]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | KINEI, SATOFUMI,HASHIMOTO, TAKAHIRO. Semiconductor laser device and manufacturing method therefor. US6865206. 2005-03-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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