Edge emitting semiconductor laser comprising a plurality of monolithically integrated laser diodes
文献类型：专利
| 作者 | BRICK, PETER; LUFT, JOHANN; MULLER, MARTIN; PHILIPPENS, MARC |
| 发表日期 | 2010-01-12 |
| 专利号 | US7646799 |
| 著作权人 | OSRAM OPTO SEMICONDUCTORS GMBH |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Edge emitting semiconductor laser comprising a plurality of monolithically integrated laser diodes |
| 英文摘要 | An edge emitting semiconductor laser containing a plurality of monolithically integrated laser diodes (1, 2, 3). Each laser diode (1, 2, 3) contains an active zone (11, 12, 13), with the active zones (11, 12, 13) being in each case arranged between waveguide layers (6), the waveguide layers (6) in each case adjoining a cladding layer (7, 8) at a side remote from the active zone (11, 12, 13). The cladding layers (7, 8) comprise inner cladding layers (7), which are arranged above a bottommost active zone (11) and below a topmost active zone (13), and outer cladding layers (8) which are arranged below the bottommost active zone (11) or above the topmost active zone (13). The inner cladding layers (7) have a smaller thickness than the outer cladding layers (8). |
| 公开日期 | 2010-01-12 |
| 申请日期 | 2007-09-25 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42201]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OSRAM OPTO SEMICONDUCTORS GMBH |
| 推荐引用方式 GB/T 7714 | BRICK, PETER,LUFT, JOHANN,MULLER, MARTIN,et al. Edge emitting semiconductor laser comprising a plurality of monolithically integrated laser diodes. US7646799. 2010-01-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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