Manufacturing a laser diode device from a plurality of gallium and nitrogen containing substrates
文献类型：专利
| 作者 | MCLAURIN, MELVIN; SZTEIN, ALEXANDER; HSU, PO SHAN; RARING, JAMES W. |
| 发表日期 | 2015-12-08 |
| 专利号 | US9209596 |
| 著作权人 | SORAA LASER DIODE, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Manufacturing a laser diode device from a plurality of gallium and nitrogen containing substrates |
| 英文摘要 | In an example, the present invention provides a gallium and nitrogen containing multilayered structure, and related method. The structure has a plurality of gallium and nitrogen containing semiconductor substrates, each of the gallium and nitrogen containing semiconductor substrates (“substrates”) having a plurality of epitaxially grown layers overlaying a top-side of each of the substrates. The structure has an orientation of a reference crystal direction for each of the substrates. The structure has a first handle substrate coupled to each of the substrates such that each of the substrates is aligned to a spatial region configured in a selected direction of the first handle substrate, which has a larger spatial region than a sum of a total backside region of plurality of the substrates to be arranged in a tiled configuration overlying the first handle substrate. The reference crystal direction for each of the substrates is parallel to the spatial region in the selected direction within 10 degrees or less. The structure has a first bonding medium provided between the first handle substrate and each of the substrate while maintaining the alignment between reference crystal orientation and the selected direction of the first handle substrate; and a processed region formed overlying each of the substrates configured concurrently while being bonded to the first handle substrate. Depending upon the embodiment, the processed region can include any combination of the aforementioned processing steps and/or steps. |
| 公开日期 | 2015-12-08 |
| 申请日期 | 2014-02-07 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42207]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SORAA LASER DIODE, INC. |
| 推荐引用方式 GB/T 7714 | MCLAURIN, MELVIN,SZTEIN, ALEXANDER,HSU, PO SHAN,et al. Manufacturing a laser diode device from a plurality of gallium and nitrogen containing substrates. US9209596. 2015-12-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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