Semiconductor laser device in which end of electric-to-optical conversion layer protrudes outward from shortest current path between end facets of cladding layers
文献类型：专利
| 作者 | YAMANAKA, FUSAO |
| 发表日期 | 2004-01-13 |
| 专利号 | US6678303 |
| 著作权人 | NICHIA CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device in which end of electric-to-optical conversion layer protrudes outward from shortest current path between end facets of cladding layers |
| 英文摘要 | A semiconductor laser device constituted by a stack of semiconductor layers formed on a substrate. The semiconductor layers include a first cladding layer of a first conductive type, an electric-to-optical conversion layer, and a second cladding layer of a second conductive type, formed in this order. In the semiconductor laser device, resonator surfaces are formed at opposite ends of the stack, and the end facet of the electric-to-optical conversion layer at each of at least one of the opposite ends of the stack protrudes outward from the shortest current path between the end facets of the first cladding layer and the second cladding layer at the end of the stack through semiconductor layers located between the first cladding layer and the second cladding layer. |
| 公开日期 | 2004-01-13 |
| 申请日期 | 2002-06-20 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42212]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NICHIA CORPORATION |
| 推荐引用方式 GB/T 7714 | YAMANAKA, FUSAO. Semiconductor laser device in which end of electric-to-optical conversion layer protrudes outward from shortest current path between end facets of cladding layers. US6678303. 2004-01-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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