Halfgeleiderlaser.
文献类型：专利
| 作者 | HIROAKI FUJII |
| 发表日期 | 2001-12-12 |
| 专利号 | NL1004998C |
| 著作权人 | NEC ELECTRONICS CORPORATION |
| 国家 | 荷兰 |
| 文献子类 | 授权发明 |
| 其他题名 | Halfgeleiderlaser. |
| 英文摘要 | The object of the present invention is to realize a transparent waveguide path AlGaInP laser which is capable of a low threshold current and a high light output efficiency without deterioration in characteristic due to crystal distortion. The semiconductor laser comprises an active layer formed on a GaAs substrate, upper and lower clad layers containing the active layer therebetween a current block layer which transmits oscillation light and has a stripe-shaped opening is formed on the upper clad layer, an etching stopper layer formed between the upper clad layer and the current block layer and on the upper clad layer exposed in a stripe shape by the opening section of the current block layer, the etching stopper layer containing no aluminium; and a clad layer formed on the current block layer and on the etching stopper layer exposed in a stripe shape by the opening section of the current block layer, wherein the upper clad layer is formed of a semiconductor containing AlGaInP or AlInP. |
| 公开日期 | 2001-12-12 |
| 申请日期 | 1997-01-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42213]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC ELECTRONICS CORPORATION |
| 推荐引用方式 GB/T 7714 | HIROAKI FUJII. Halfgeleiderlaser.. NL1004998C. 2001-12-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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