TEM mode quantum wire or well structure
文献类型：专利
| 作者 | DUTTA, MITRA; STROSCIO, MICHAEL A.; SIRENKO, YURI M.; KIM, KI WOOK |
| 发表日期 | 1997-08-26 |
| 专利号 | US5661740 |
| 著作权人 | ARMY, UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | TEM mode quantum wire or well structure |
| 英文摘要 | A semiconductor lasing device is formed by disposing a quantum well or quantum wire array between positive and negative ohmic contacts such that different potentials are applied along the array to establish a transverse electromagnetic (TEM) mode of the optic signal (i.e. where the field components lie in a plane perpendicular to the direction of propagation). Thus, the light confinement l will be on the order of the electron confinement a. By applying different potentials via the positive and negative ohmic contacts to multiply connected waveguides, the established TEM mode does not have a cut-off frequency, and therefore, the gain of device can be greatly enhanced while still providing increased anisotropy and a low threshold current. |
| 公开日期 | 1997-08-26 |
| 申请日期 | 1996-04-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42215]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ARMY, UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE |
| 推荐引用方式 GB/T 7714 | DUTTA, MITRA,STROSCIO, MICHAEL A.,SIRENKO, YURI M.,et al. TEM mode quantum wire or well structure. US5661740. 1997-08-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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