Method for fabricating a semiconductor laser device
文献类型：专利
| 作者 | KOKUBO, YOSHIHIRO; SUSAKI, WATARU |
| 发表日期 | 1988-02-16 |
| 专利号 | US4725450 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for fabricating a semiconductor laser device |
| 英文摘要 | A semiconductor laser device is fabricated by forming a first semiconductor layer of N type GaAs to be a current narrowing layer on a P type GaAs semiconductor substrate, forming a second semiconductor layer of P type AlGaAs on the first semiconductor layer, removing said second semiconductor layer by etching except the proximity of the portion to be the end surface of a resonator, forming a striped groove which is deep enough to penetrate the first semiconductor layer and extends to that direction which crosses the surface to be the end surface of the resonator and, depositing a lower clad layer, an active layer, an upper layer and a contact layer in this order. |
| 公开日期 | 1988-02-16 |
| 申请日期 | 1987-02-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42227]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | KOKUBO, YOSHIHIRO,SUSAKI, WATARU. Method for fabricating a semiconductor laser device. US4725450. 1988-02-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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