面発光型半導体レーザーの製造方法
文献类型：专利
| 作者 | 伊賀 健一; 古沢 浩太郎; 茨木 晃 |
| 发表日期 | 1997-11-21 |
| 专利号 | JP2719631B2 |
| 著作权人 | 科学技術振興事業団 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 面発光型半導体レーザーの製造方法 |
| 英文摘要 | PURPOSE:To improve current entrapment effect by providing a current block layer around an activation layer performing crystal growth for two times. CONSTITUTION:An n-Ga0.6Al0.4As clad layer 2 and a p-GaAs activation layer 11 are allowed to grow in sequence on an n-GaAs substrate 1 by the first growth. Then, a mesa of 5mumphi and a height up to 2.0mum is formed on the p-GaAs activation layer 1 Then, after allowing an n-Ga0.6Al0.4As block layer 12 to grow on the p-GaAs activation layer 11 including the mesa utilizing the characteristics of the LPE method, the thin n-Ga0.6Al0.4As block layer 12 on the mesa of the n-GaAs activation layer 11 is removed, and then a p-Ga0.6Al0.4As clad layer 7 and a p-Ga0.85Al0.15As cap layer 8 are allowed to grow. Finally, one part of the n-GaAs substrate 1 is removed until the n-Ga0.6Al0.4As clad layer 2 is exposed, a reflection mirror 9a and a reflection mirror 9b on a cap layer 8 are provided, and then electrodes 10a, 10a and 10b, 10b are provided to allow a surface-emission type semiconductor to be formed. |
| 公开日期 | 1998-02-25 |
| 申请日期 | 1988-08-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42228]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 科学技術振興事業団 |
| 推荐引用方式 GB/T 7714 | 伊賀 健一,古沢 浩太郎,茨木 晃. 面発光型半導体レーザーの製造方法. JP2719631B2. 1997-11-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。