Method of fabricating semiconductor laser device and semiconductor laser device
文献类型：专利
| 作者 | DOI, MASATO; OOHATA, TOYOHARU |
| 发表日期 | 2004-12-14 |
| 专利号 | US6831937 |
| 著作权人 | SONY CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of fabricating semiconductor laser device and semiconductor laser device |
| 英文摘要 | A method of fabricating a semiconductor laser device includes the steps of forming semiconductor layers composed of a first conductive type cladding layer, an active layer, and a second conductive type cladding layer on a substrate, and peeling a device formation region of the semiconductor layers from the substrate and simultaneously forming a resonance mirror on an end portion of the device formation region by irradiating the device formation region with energy beams traveling from the back surface side of the substrate. With this configuration, it is possible to peel a device from a substrate and also form a flat resonance mirror with less damage of crystal by laser abrasion, and further to easily form a high quality resonance mirror without increasing the number of fabrication steps. |
| 公开日期 | 2004-12-14 |
| 申请日期 | 2002-07-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42231]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORPORATION |
| 推荐引用方式 GB/T 7714 | DOI, MASATO,OOHATA, TOYOHARU. Method of fabricating semiconductor laser device and semiconductor laser device. US6831937. 2004-12-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。