Method for making multiple wavelength semiconductor lasers on a single wafer
文献类型：专利
| 作者 | CHAKRABARTI, UTPAL KUMAR; GLEW, RICHARD W.; GRIM-BOGDAN, KAREN A. |
| 发表日期 | 2000-03-07 |
| 专利号 | US6033926 |
| 著作权人 | LUCENT TECHNOLOGIES |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for making multiple wavelength semiconductor lasers on a single wafer |
| 英文摘要 | A plurality of different wavelength semiconductor lasers are fabricated on a single semiconductor substrate by establishing a thermal gradient across the substrate during epitaxial growth. The result is a variation in composition which produces a corresponding variation of laser wavelength across the substrate. The thermal gradient is preferably achieved by disposing a patterned layer of material (heat reflecting or heat absorbing) on the back side of the substrate, radiatively heating the backside and growing the active layers on the front side. The backside layer is removed when the substrate is lapped to final thickness. |
| 公开日期 | 2000-03-07 |
| 申请日期 | 1998-06-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42233]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | LUCENT TECHNOLOGIES |
| 推荐引用方式 GB/T 7714 | CHAKRABARTI, UTPAL KUMAR,GLEW, RICHARD W.,GRIM-BOGDAN, KAREN A.. Method for making multiple wavelength semiconductor lasers on a single wafer. US6033926. 2000-03-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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