Method for producing semiconductor device
文献类型：专利
| 作者 | KANENO, NOBUAKI; KIZUKI, HIROTAKA; HAYAFUJI, NORIO; SHIBA, TETSUO; TADA, HITOSHI |
| 发表日期 | 1994-05-31 |
| 专利号 | US5316967 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for producing semiconductor device |
| 英文摘要 | In a method for producing a semiconductor device, a first semiconductor layer is epitaxially grown on a semiconductor substrate, an insulating film pattern is formed on the first semiconductor layer, and portions of the first semiconductor layer are removed by wet etching using the insulating film pattern as a mask to leave a ridge having a reverse mesa shape and a width. Ends of the insulating film pattern are removed by etching to approximately the width of the ridge, a second semiconductor layer is epitaxially grown on opposite sides of the ridge, and a third semiconductor layer is epitaxially grown on the ridge and the second semiconductor layer. The second semiconductor layer is evenly grown without concave portions at opposite sides of the ridge. In addition, the third semiconductor layer is evenly grown on the ridge and the second semiconductor layer, and an electrode reliably connects the surface of the third semiconductor layer. A semiconductor device with good performance and high reliability is reproducibly manufactured. |
| 公开日期 | 1994-05-31 |
| 申请日期 | 1992-11-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42244]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | KANENO, NOBUAKI,KIZUKI, HIROTAKA,HAYAFUJI, NORIO,et al. Method for producing semiconductor device. US5316967. 1994-05-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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