Semiconductor light emitting device with a Mg superlattice structure
文献类型：专利
| 作者 | ISHIBASHI, AKIRA; MATSUMOTO, SATOSHI; NAGAI, MASAHARU; ITO, SATOSHI; TOMIYA, SHIGETAKA; NAKANO, KAZUSHI; MORITA, ETSUO |
| 发表日期 | 1998-10-27 |
| 专利号 | US5828086 |
| 著作权人 | SONY CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor light emitting device with a Mg superlattice structure |
| 英文摘要 | A semiconductor light emitting device ccomprises a first cladding layer, an active layer and a second cladding layer which are stacked on a semiconductor substrate. At least a part of the first cladding layer and the second cladding layer has a superlattice structure comprising II-VI compound semiconductor. Another semiconductor light emitting device comprises a first cladding layer, a first guide layer, an active layer, a second guide layer and a second cladding layer which are stacked on a semiconductor substrate. At least a part of the first cladding layer, the first guide layer, the second cladding layer and the second guide layer has a superlattice structure. Still anothr semiconductor light emitting device comprises a defect decomposing layer, a defect blocking layer, a first cladding layer, an active layer, a second cladding layer which are stacked on a semiconductor substrate. The defect decomposing layer and the defect blocking layer comprise a superlattice structure. |
| 公开日期 | 1998-10-27 |
| 申请日期 | 1997-03-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42247]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORPORATION |
| 推荐引用方式 GB/T 7714 | ISHIBASHI, AKIRA,MATSUMOTO, SATOSHI,NAGAI, MASAHARU,et al. Semiconductor light emitting device with a Mg superlattice structure. US5828086. 1998-10-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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