Laser comprising stacked laser diodes produced by epitaxial growth inserted between two bragg mirrors
文献类型：专利
| 作者 | NAGLE, JULIEN; ROSENCHER, EMMANUEL |
| 发表日期 | 2001-05-22 |
| 专利号 | US6236670 |
| 著作权人 | THOMSON-CSF |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Laser comprising stacked laser diodes produced by epitaxial growth inserted between two bragg mirrors |
| 英文摘要 | A laser made of a stack of laser diodes. The stack is inserted between two mirrors to create a laser cavity. The stack of diodes is produced by epitaxial growth of a set of semiconductor layers. The ohmic contact between two adjacent laser diodes is provided by an Esaki diode junction. The optical field of the mode created in the laser cavity is periodically cancelled at the Esaki diode junctions so as to create structures with small dimensions. |
| 公开日期 | 2001-05-22 |
| 申请日期 | 1998-03-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42255]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | THOMSON-CSF |
| 推荐引用方式 GB/T 7714 | NAGLE, JULIEN,ROSENCHER, EMMANUEL. Laser comprising stacked laser diodes produced by epitaxial growth inserted between two bragg mirrors. US6236670. 2001-05-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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