Multiple quantum well distributed feedback semiconductor laser device and method for fabricating the same
文献类型：专利
| 作者 | SHIM, JONG-IN; KITAMURA, MITSUHIRO |
| 发表日期 | 1995-09-12 |
| 专利号 | US5450437 |
| 著作权人 | NEC CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Multiple quantum well distributed feedback semiconductor laser device and method for fabricating the same |
| 英文摘要 | A distributed feedback semiconductor laser device having a semiconductor substrate, a bottom electrode formed on a bottom surface of the substrate, a corrugation-shaped grating formed on a top surface of the substrate, an active waveguide layer whose energy band gap profile and whose light propagation constant are varied along a cavity length direction of the laser device, the active waveguide layer being formed over the corrugation-shaped grating, a clad layer formed to cover the active waveguide layer, and a top electrode formed on a top of the clad layer. The active waveguide layer is grown by a selective metal organic vapor phase epitaxy with use of slender insulation masks having a variation in width, the slender insulation masks being arranged at both sides of an area on which the active waveguide layer is grown. |
| 公开日期 | 1995-09-12 |
| 申请日期 | 1993-12-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42256]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORPORATION |
| 推荐引用方式 GB/T 7714 | SHIM, JONG-IN,KITAMURA, MITSUHIRO. Multiple quantum well distributed feedback semiconductor laser device and method for fabricating the same. US5450437. 1995-09-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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