Fabrication process of semiconductor lasers
文献类型：专利
| 作者 | FUKUZAWA, TADASHI; ONO, YUICHI; NAKATSUKA, SHINICHI; KAJIMURA, TAKASHI |
| 发表日期 | 1988-11-08 |
| 专利号 | US4783425 |
| 著作权人 | HITACHI, LTD., A CORP. OF JAPAN |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Fabrication process of semiconductor lasers |
| 英文摘要 | A p-GaAlAs cladding layer is exposed to the air if a groove of the form of a stripe is formed by chemical etching in an n-GaAs layer that serves as a current confinement layer on the p-GaAlAs cladding layer, the groove being so formed as to reach the cladding layer. The GaAlAs is oxidized so easily that an unstable degradation layer is formed on the surface thereof. To solve this problem according to the prior art, an undoped GaAs layer that serves as a cover layer is formed on the p-GaAlAs cladding layer, the n-GaAs layer is formed, and the etching is effected so that the undoped GaAs layer is simply exposed. The undoped GaAs layer is then heated in the MBE apparatus while being irradiated with the As molecular beam and is thermally etched. Therefore, the cladding layer is exposed in vacuum and the p-GaAlAs layer is formed thereon. However, this method is not suited for mass-production since the thermal etching is unstable and it needs the MBE apparatus of a very high degree of vacuum. Quality of the crystal decreases, too, due to the heating. This invention therefore provides a fabrication process of semiconductor lasers in which the cover layer disappears due to interdiffusion of constituent elements that stem from the diffusion of impurities such as zinc ions in the undoped GaAs layer. |
| 公开日期 | 1988-11-08 |
| 申请日期 | 1986-10-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42263]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI, LTD., A CORP. OF JAPAN |
| 推荐引用方式 GB/T 7714 | FUKUZAWA, TADASHI,ONO, YUICHI,NAKATSUKA, SHINICHI,et al. Fabrication process of semiconductor lasers. US4783425. 1988-11-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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