Gallium nitride based semiconductor light emitting device
文献类型：专利
| 作者 | NISHITSUKA, MITSURU; CHIKUMA, KIYOFUMI |
| 发表日期 | 2003-02-04 |
| 专利号 | US6515311 |
| 著作权人 | PIONEER CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Gallium nitride based semiconductor light emitting device |
| 英文摘要 | A GaN based semiconductor laser device which can prevent guided mode light emitted from the active layer from leaking through the cladding layer to the underlying layer without making the cladding layer excessively thick is provided. The device is characterized in that if an n-type cladding layer, a waveguide layer and a p-type cladding layer are collectively defined as a first three-layer waveguide path and a substrate, an underlying layer and an n-type cladding layer are collectively defined as a second three-layer waveguide path, then effective refractive indices of light propagating through the first and second three-layer waveguide paths are set different from each other. |
| 公开日期 | 2003-02-04 |
| 申请日期 | 2000-05-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42264]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | PIONEER CORPORATION |
| 推荐引用方式 GB/T 7714 | NISHITSUKA, MITSURU,CHIKUMA, KIYOFUMI. Gallium nitride based semiconductor light emitting device. US6515311. 2003-02-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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