Semiconductor laser devices
文献类型：专利
| 作者 | SAGAWA, MISUZU; HIRAMOTO, KIYOHISA; TSUCHIYA, TOMONOBU; TOYONAKA, TAKASHI; SHINODA, KAZUNORI |
| 发表日期 | 1998-12-01 |
| 专利号 | US5844931 |
| 著作权人 | HITACHI, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser devices |
| 英文摘要 | A semiconductor laser which does not cause a sudden failure due to an electric surge. A ridge that is formed by a GaAs buffer layer, an n-InGaP cladding layer which is lattice-matched to a GaAs substrate, a strained-quantum well active layer, a p-InGaP cladding layer which is lattice-matched to the GaAs substrate, a p-GaAs waveguide layer, a p-InGaP cladding layer which is lattice-matched to the GaAs substrate, and a p-GaAs cap layer is constructed on the n-GaAs substrate by being buried therein by an n-InGaP current-blocking layer. A device stripe is constructed by a current-injected region in the device and current-non-injected regions near facets. |
| 公开日期 | 1998-12-01 |
| 申请日期 | 1997-07-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42269]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI, LTD. |
| 推荐引用方式 GB/T 7714 | SAGAWA, MISUZU,HIRAMOTO, KIYOHISA,TSUCHIYA, TOMONOBU,et al. Semiconductor laser devices. US5844931. 1998-12-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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