Vertical cavity electron beam pumped semiconductor lasers and methods
文献类型：专利
| 作者 | RICE, ROBERT R.; RUGGIERI, NEIL F.; SHANLEY, JAMES F. |
| 发表日期 | 1998-09-15 |
| 专利号 | US5807764 |
| 著作权人 | MCDONNELL DOUGLAS CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Vertical cavity electron beam pumped semiconductor lasers and methods |
| 英文摘要 | An electron beam pumped semiconductor laser includes a semiconductor laser screen and an electron beam source adjacent the semiconductor laser screen. The semiconductor laser screen comprises a transparent single crystal substrate, an electron beam responsive active gain layer on the substrate, and first and second reflective layers. The epitaxial electron beam responsive active gain layer has a crystal structure in alignment with the crystal structure of the substrate, and the first and second reflective layers define a laser cavity through the epitaxial electron beam responsive active gain layer therebetween. The electron beam source generates an electron beam which impinges on the epitaxial electron beam responsive active gain layer thereby generating a laser output. Accordingly, the single crystal active gain layer can be formed on the substrate by epitaxial deposition techniques increasing the performance and reliability of the electron beam pumped semiconductor laser. |
| 公开日期 | 1998-09-15 |
| 申请日期 | 1997-03-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42277]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MCDONNELL DOUGLAS CORPORATION |
| 推荐引用方式 GB/T 7714 | RICE, ROBERT R.,RUGGIERI, NEIL F.,SHANLEY, JAMES F.. Vertical cavity electron beam pumped semiconductor lasers and methods. US5807764. 1998-09-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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