HOCHLEISTUNGS-HALBLEITERLASERDIODE UND VERFAHREN ZUR HERSTELLUNG EINER SOLCHEN DIODE
文献类型：专利
| 作者 | TRAUT SILKE; SCHMIDT BERTHOLD; SVERDLOV BORIS; THIES ACHIM |
| 发表日期 | 2007-03-29 |
| 专利号 | DE60311844D1 |
| 著作权人 | BOOKHAM TECHNOLOGY PLC. TOWCESTER |
| 国家 | 德国 |
| 文献子类 | 授权发明 |
| 其他题名 | HOCHLEISTUNGS-HALBLEITERLASERDIODE UND VERFAHREN ZUR HERSTELLUNG EINER SOLCHEN DIODE |
| 英文摘要 | Semiconductor laser diodes, particularly high power ridge waveguide laser diodes, are often used in opto-electronics as so-called pump laser diodes for fiber amplifiers in optical communication lines. To provide the desired high power output and stability of such a laser diode and avoid degradation during use, the present invention concerns an improved design of such a device, the improvement concerns a method of suppressing the undesired first and higher order modes of the laser which consume energy and do not contribute to the optical output of the laser, thus reducing it's efficiency. This novel effect is provided by a structure comprising CIG-for Complex Index Guiding-elements on top of the laser diode, said CIG being established by fabricating CIG elements consisting of one or a plurality of layers and containing at least one layer which provides the optical absorption of undesired modes of the lasing wavelength. This CIG preferably contains an insulating layer as a first contact layer to the semiconductor. The CIG elements are manufactured by a selected sequence of processing steps, in particular several masking steps, and are specifically shaped, both in thickness and coverage of the lasers semiconductor body, to provide desired suppression characteristics. Further, the CIG elements may be combined with the contact layer usually providing the electrical input power to the laser diode. |
| 公开日期 | 2007-03-29 |
| 申请日期 | 2003-08-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42283]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | BOOKHAM TECHNOLOGY PLC. TOWCESTER |
| 推荐引用方式 GB/T 7714 | TRAUT SILKE,SCHMIDT BERTHOLD,SVERDLOV BORIS,et al. HOCHLEISTUNGS-HALBLEITERLASERDIODE UND VERFAHREN ZUR HERSTELLUNG EINER SOLCHEN DIODE. DE60311844D1. 2007-03-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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