Semiconductor laser elements and method of making same
文献类型：专利
| 作者 | ASHIDA, MASAYOSHI; UCHIDA, SATOSHI |
| 发表日期 | 2002-10-08 |
| 专利号 | US6463087 |
| 著作权人 | ROHM CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser elements and method of making same |
| 英文摘要 | A semiconductor laser element is made by forming a lower clad layer, an active layer and an upper clad layer sequentially one on top of another on a semiconductor substrate, forming an etching stop layer completely over the upper clad layer, forming a contact layer on the etching stop layer, and etching portions of the contact layer to form steps. The etching stop layer has a slower etching speed than the contact layer against the etching liquid used for forming the steps by etching portions of the contact layer. An upper electrode is formed on the contact layer and a lower electrode is formed on the bottom surface of the substrate. The steps provide areas in the active layer where a current will not flow through. |
| 公开日期 | 2002-10-08 |
| 申请日期 | 1999-06-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42284]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ROHM CO., LTD. |
| 推荐引用方式 GB/T 7714 | ASHIDA, MASAYOSHI,UCHIDA, SATOSHI. Semiconductor laser elements and method of making same. US6463087. 2002-10-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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