Method for producing a group II-VI compound semiconductor thin film and a group II-VI compound semiconductor device
文献类型：专利
| 作者 | NAKANISHI, KENJI; KITAGAWA, MASAHIKO; TOMOMURA, YOSHITAKA; HIRATA, SHINYA |
| 发表日期 | 1996-04-16 |
| 专利号 | US5508522 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for producing a group II-VI compound semiconductor thin film and a group II-VI compound semiconductor device |
| 英文摘要 | A method for fabricating a semiconductor thin film is disclosed. The method includes the step of epitaxially growing a semiconductor layer made of a group II-VI compound semiconductor to have a thickness of at least one atomic layer or more, on a main plane of a single-crystal semiconductor substrate, the semiconductor substrate having one of a diamond structure and a zinc blende structure, the main plane being inclined by an angle in the range of 2 to 16 degrees with respect to a (100) plane. |
| 公开日期 | 1996-04-16 |
| 申请日期 | 1993-12-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42294]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | NAKANISHI, KENJI,KITAGAWA, MASAHIKO,TOMOMURA, YOSHITAKA,et al. Method for producing a group II-VI compound semiconductor thin film and a group II-VI compound semiconductor device. US5508522. 1996-04-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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