Method of making an article comprising an oxide layer on a GaAs-based semiconductor body
文献类型：专利
| 作者 | CHEN, YOUNG-KAI; CHO, ALFRED YI; HOBSON, WILLIAM SCOTT; HONG, MINGHWEI; KUO, JENN-MING; KWO, JUEINAI RAYNIEN; MURPHY, DONALD WINSLOW; REN, FAN |
| 发表日期 | 2001-08-07 |
| 专利号 | US6271069 |
| 著作权人 | AGERE SYSTEMS GUARDIAN CORP. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of making an article comprising an oxide layer on a GaAs-based semiconductor body |
| 英文摘要 | Disclosed are a method of making GaAs-based enhancement-type MOS-FETs, and articles (e.g., GaAs-based ICs) that comprise such a MOS-FET. The MOS-FETs are planar devices, without etched recess or epitaxial re-growth, with gate oxide that is primarily Ga2O3, and with low midgap interface state density (e.g., at most 1x1011 cm-2 eV-1 at 20° C.). The method involves ion implantation, implant activation in an As-containing atmosphere, surface reconstruction, and in situ deposition of the gate oxide. In preferred embodiments, no processing step subsequent to gate oxide formation is carried out above 300° C. in air, or above about 700° C. in UHV. The method makes possible fabrication of planar enhancement-type MOS-FETs having excellent characteristics, and also makes possible fabrication of complementary MOS-FETs, as well as ICs comprising MOS-FETs and MES-FETs. The method includes deposition of gate oxide of overall composition GaxAyOz, where Ga substantially is in the 3+ oxidation state, A is one or more electropositive stabilizer element adapted for stabilizing Ga in the 3+ oxidation state, x is greater than or equal to zero, z is selected to satisfy the requirement that both Ga and A are substantially fully oxidized, and y/(x+y) is greater than 0. |
| 公开日期 | 2001-08-07 |
| 申请日期 | 1998-07-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42295]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AGERE SYSTEMS GUARDIAN CORP. |
| 推荐引用方式 GB/T 7714 | CHEN, YOUNG-KAI,CHO, ALFRED YI,HOBSON, WILLIAM SCOTT,et al. Method of making an article comprising an oxide layer on a GaAs-based semiconductor body. US6271069. 2001-08-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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