III-Nitride optoelectronic semiconductor device containing lattice mismatched III-Nitride semiconductor materials
文献类型：专利
| 作者 | DUGGAN, GEOFFREY |
| 发表日期 | 2004-02-24 |
| 专利号 | US6695913 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | III-Nitride optoelectronic semiconductor device containing lattice mismatched III-Nitride semiconductor materials |
| 英文摘要 | A light-emitting diode or laser diode comprises a sapphire substrate and, grown on the substrate, a GaN buffer layer, an n-doped GaN contact layer, an n-doped (AlGa)N cladding layer, a Zn-doped (InGa)N active layer, a p-doped (AlGa)N cladding layer and a p-doped GaN contact layer. Graded layers are introduced at the interfaces between the cladding layers and both the contact layers and the active layer. The constituency of each graded layer is graded from one side to the other of the layer such that the layer is lattice matched with the adjacent layer on each side with the result that the strain at the interfaces between the layers is reduced and the possibility of deleterious dislocations being introduced at the interfaces is minimised. By removing or reducing such dislocations, the efficiency of the operation of the device is increased. |
| 公开日期 | 2004-02-24 |
| 申请日期 | 2000-02-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42298]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | DUGGAN, GEOFFREY. III-Nitride optoelectronic semiconductor device containing lattice mismatched III-Nitride semiconductor materials. US6695913. 2004-02-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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