External cavity control semiconductor laser
文献类型：专利
| 作者 | MAEDA, MINORU |
| 发表日期 | 1995-08-15 |
| 专利号 | US5442651 |
| 著作权人 | ANDO ELECTRIC CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | External cavity control semiconductor laser |
| 英文摘要 | One end of semiconductor laser 1 is coated an antireflection film 1A. And, the external resonator is constructed with a diffraction grating 2 and an external reflective mirror 4. Additionally, a beam splitter 3 is provided between the diffraction grating 2 and the external reflective mirror 4. An output light from antireflection film 1A of semiconductor laser 1 is transformed to a parallel light by the convex lens 5A, and is supplied to the beam splitter 3. The parallel light 13A changes a light path thereof at beam splitter 3, and is then supplied to the external resonator. A wavelength of the parallel light 13A is determined by the diffraction grating 2, so that the light has a selected wavelength, and a phase which is matched with a phase condition of the external resonator. A portion of the resonated light is reflected by the beam splitter 3, and is fed back to the semiconductor laser 1 via convex lens 5A, as a reflected light. When the light is fed back, the semiconductor laser 1 outputs a light of narrow spectral line width. This light is outputted from another end, which is not coated with antireflection film 1A, of semiconductor laser 1, and is transformed to a parallel light by the convex lens 5B. This parallel light 13B forwards to a light isolator 6, is then collected at optical fiber 8 by the convex lens 7. The light which supplied at optical fiber 8 is output to an external apparatus. |
| 公开日期 | 1995-08-15 |
| 申请日期 | 1993-09-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42301]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ANDO ELECTRIC CO., LTD. |
| 推荐引用方式 GB/T 7714 | MAEDA, MINORU. External cavity control semiconductor laser. US5442651. 1995-08-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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