Method for producing a semiconductor laser device
文献类型：专利
| 作者 | MURAKAMI, TAKASHI; KANENO, NOBUAKI |
| 发表日期 | 1993-03-09 |
| 专利号 | US5192711 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for producing a semiconductor laser device |
| 英文摘要 | A visible light semiconductor laser device has a double heterojunction structure comprising AlGaInP series semiconductors which is produced on a substrate having an electrode on its rear surface. A a p type GaInP buffer layer is provided between a p type GaAs contact layer and a p type AlGaInP cladding layer. The buffer layer has a constant composition ratio and the energy band gap is smaller at the side of the p type GaAs contact layer than at the p type AlGaInP cladding layer. Thus, an energy band discontinuity between the p type GaAs contact layer and the p type AlGaInP cladding layer are relaxed for operation of the laser at low voltage. The laser is produced by varying the growth conditions, such as temperature or V/III ratio during growth, of the buffer layer to vary the energy band gap within the buffer layer. |
| 公开日期 | 1993-03-09 |
| 申请日期 | 1992-01-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42302]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | MURAKAMI, TAKASHI,KANENO, NOBUAKI. Method for producing a semiconductor laser device. US5192711. 1993-03-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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