中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Light-emitting device with a quantum-wave interference layer

文献类型:专利

作者KANO, HIROYUKI
发表日期2002-11-26
专利号US6486490
著作权人CANARE ELECTRIC CO., LTD.
国家美国
文献子类授权发明
其他题名Light-emitting device with a quantum-wave interference layer
英文摘要An emission layer is formed in a p-layer, and an electron reflecting layer and a hole reflecting layer are formed sandwiching the emission layer. Each of the electron reflecting layer and the hole reflecting layer is constituted by a quantum-wave interference layer with plural periods of a pair of a first layer W and a second layer B. Thicknesses of the first and the second layers in the electron reflecting layer are determined by multiplying by an odd number one fourth of a quantum-wave wavelength of electrons in each of the first and the second layers, and each thicknesses of the first and the second layers in the hole reflecting layer are determined by multiplying by an odd number one fourth of a quantum-wave wavelength of holes in each of the first and the second layers. A luminous efficiency of the LED is improved by electron-hole pairs. The structure in which the emission layer is sandwiched by the electron reflecting layer and the hole reflecting layer is an alternative of a structure in which an i-layer is sandwiched by an n-cladding layer and a p-cladding layer. The emission layer can be formed in a p-layer, and the hole reflecting layer can be formed in an n-layer, an n--layer or a p--layer.
公开日期2002-11-26
申请日期1999-10-22
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/42303]  
专题半导体激光器专利数据库
作者单位CANARE ELECTRIC CO., LTD.
推荐引用方式
GB/T 7714
KANO, HIROYUKI. Light-emitting device with a quantum-wave interference layer. US6486490. 2002-11-26.

入库方式: OAI收割

来源:西安光学精密机械研究所

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