Semiconductor laser device and method of designing the same
文献类型：专利
| 作者 | GOTO, TAKENORI; HAYASHI, NOBUHIKO; MIYAKE, TERUAKI; MATSUMOTO, MITSUAKI; MATSUKAWA, KENICHI; IDE, DAISUKE; FURUSAWA, KOUTAROU; IBARAKI, AKIRA; YODOSHI, KEIICHI; KUNISATO, TATSUYA |
| 发表日期 | 1997-03-04 |
| 专利号 | US5608752 |
| 著作权人 | SANYO ELECTRIC CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device and method of designing the same |
| 英文摘要 | In a semiconductor laser device comprising an n-type cladding layer, an active layer formed on the cladding layer, a p-type cladding layer formed on the active layer, and a p-type saturable light absorbing layer provided in the p-type cladding layer, the current confinement width for confining current injected into the active layer being W, the thickness da of the active layer, the optical confinement factor GAMMA a of the active layer, the thickness ds of the saturable light absorbing layer, the optical confinement factor GAMMA s of the saturable light absorbing layer, and the light spot size S on a facet of the semiconductor laser device are so set as to satisfy a predetermined relationship. The reflectivity on a light output facet is set in the range of 10 to 20%. |
| 公开日期 | 1997-03-04 |
| 申请日期 | 1995-04-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42304]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO ELECTRIC CO., LTD. |
| 推荐引用方式 GB/T 7714 | GOTO, TAKENORI,HAYASHI, NOBUHIKO,MIYAKE, TERUAKI,et al. Semiconductor laser device and method of designing the same. US5608752. 1997-03-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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