Process for the selective growth of GaAs
文献类型：专利
| 作者 | MEIER, HEINZ PETER; GIESON, EDWARD A. VAN; WALTER, WILLI |
| 发表日期 | 1993-01-20 |
| 专利号 | EP0348540B1 |
| 著作权人 | INTERNATIONAL BUSINESS MACHINES CORPORATION |
| 国家 | 欧洲专利局 |
| 文献子类 | 授权发明 |
| 其他题名 | Process for the selective growth of GaAs |
| 英文摘要 | The process is particularly useful in the fabrication of GaAs quantum well (QW) laser diodes. Starting point is a ridge-patterned (100)-substrate (21), the crystal orientation of the sidewalls, e.g., (411A)-oriented, being different from that of the horizontal top. The sidewall facets thus have a lower Ga incorporation rate. In a molecular beam epitaxy (MBE) system, the lower AlGaAs cladding layer (22) is first grown, followed by the high-temperature growth of the active GaAs QW (23). Due to diffusion and desorption processes, the GaAs thickness at the sidewalls (23E) is smaller than on the horizontal top (23R) of the ridge. During a short growth interrupt, the GaAs completely desorps from the sidewall facets. With the subsequent growth of the upper cladding layer (24), the QW becomes laterally embedded in higher bandgap material providing for lateral electric confinement. |
| 公开日期 | 1993-01-20 |
| 申请日期 | 1988-06-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42309]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | INTERNATIONAL BUSINESS MACHINES CORPORATION |
| 推荐引用方式 GB/T 7714 | MEIER, HEINZ PETER,GIESON, EDWARD A. VAN,WALTER, WILLI. Process for the selective growth of GaAs. EP0348540B1. 1993-01-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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