半導体装置の製造方法および、光半導体装置の製造方法
文献类型：专利
| 作者 | 穴山 親志 |
| 发表日期 | 1999-02-26 |
| 专利号 | JP2890745B2 |
| 著作权人 | 富士通株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体装置の製造方法および、光半導体装置の製造方法 |
| 英文摘要 | PURPOSE:To obtain a manufacturing method excellent in yield wherein the number of times of growth is reduced and the controllability of wavelength is improved, by making a first epitaxial layer thicker than a second epitaxial layer, and making the height of the second epitaxial layer effectively equal to a part of the first epitaxial layer. CONSTITUTION:In the case of selective growth using selection mask, the growth speed changes remarkably. The growth speed in a first belt type region 1c can be controlled by changing the width and the covering area of a selection mask 3. By using the difference of the growth speed, the thickness ratio of a first quamtum well structure 6a to a second quantum well structure 6b can be changed. Thereby the ratio of the quantum level energy gap of the first quantum well structure 6a to the quantum level energy gap of the second quantum well structure 6b can be easily controlled. Further, since the surface height of the first region 1a is made lower than that of the second region 1b to begin with, the heights of the first quantum well structure 6a and the second quantum well structure 6b can be controlled to be equal, by epitaxially growing the first belt type region 1c and the second region 1b at the same time. |
| 公开日期 | 1999-05-17 |
| 申请日期 | 1990-08-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42310]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 富士通株式会社 |
| 推荐引用方式 GB/T 7714 | 穴山 親志. 半導体装置の製造方法および、光半導体装置の製造方法. JP2890745B2. 1999-02-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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