Epitaxial Wurtzite growth structure for semiconductor light-emitting device
文献类型：专利
| 作者 | MATSUOKA, TAKASHI; SASAKI, TORU |
| 发表日期 | 1991-04-09 |
| 专利号 | US5006908 |
| 著作权人 | NIPPON TELEGRAPH AND TELEPHONE CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Epitaxial Wurtzite growth structure for semiconductor light-emitting device |
| 英文摘要 | An epitaxial growth structure for a semiconductor light-emitting device includes a sapphire substrate having a (0110) face (substantially M face), and a wurtzite type Group III nitride mixed crystal semiconductor single crystal film epitaxially grown on the substrate. A semiconductor light-emitting device includes the sapphire substrate having a (0110) face (substantially M face), the wurtzite type Group III nitride mixed crystal semiconductor single crystal film epitaxially grown on the substrate, an insulating film formed on the single crystal film, and a metal electrode formed on the insulating film. |
| 公开日期 | 1991-04-09 |
| 申请日期 | 1990-02-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42312]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGRAPH AND TELEPHONE CORPORATION |
| 推荐引用方式 GB/T 7714 | MATSUOKA, TAKASHI,SASAKI, TORU. Epitaxial Wurtzite growth structure for semiconductor light-emitting device. US5006908. 1991-04-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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