Manufacturing method of semiconductor laser with non-absorbing mirror structure
文献类型：专利
| 作者 | ISHIKAWA, MASAYUKI; OKUDA, HAJIME; SHIOZAWA, HIDEO; ITAYA, KAZUHIKO; WATANABE, YUKIO; SUZUKI, MARIKO; HATAKOSHI, GENICHI |
| 发表日期 | 1993-01-19 |
| 专利号 | US5181218 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Manufacturing method of semiconductor laser with non-absorbing mirror structure |
| 英文摘要 | An InGaAlP NAM structure laser is formed with a double-heterostructure section disposed on an n-type GaAs substrate. The double-heterostructure section includes a first cladding layer of n-type InGaAlP, a non-doped InGaP active layer, and a second cladding layer of p-type InGaAlP. An n-type GaAs current-blocking layer having a stripe opening and a p-type GaAs contact layer are sequentially formed on the second cladding layer by MOCVD crystal growth. A low-energy band gap region is defined in a central region of the active layer located immediately below the stripe opening. A high-energy band gap region is defined in a peripheral region of the active layer corresponding to a light output end portion of the laser and located immediately below the current-blocking layer. Therefore, self absorption of an oscillated laser beam at the output end portion can be reduced or prevented. |
| 公开日期 | 1993-01-19 |
| 申请日期 | 1990-11-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42313]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA |
| 推荐引用方式 GB/T 7714 | ISHIKAWA, MASAYUKI,OKUDA, HAJIME,SHIOZAWA, HIDEO,et al. Manufacturing method of semiconductor laser with non-absorbing mirror structure. US5181218. 1993-01-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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