Semiconductor light source with electrically tunable emission wavelength
文献类型：专利
| 作者 | BELENKY, GREGORY; BRUNO, JOHN D.; KISIN, MIKHAIL V.; LURYI, SERGE; SHTERENGAS, LEON; SUCHALKIN, SERGEY; TOBER, RICHARD L. |
| 发表日期 | 2011-01-25 |
| 专利号 | US7876795 |
| 著作权人 | MAXION TECHNOLOGIES, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor light source with electrically tunable emission wavelength |
| 英文摘要 | A semiconductor light source comprises a substrate, lower and upper claddings, a waveguide region with imbedded active area, and electrical contacts to provide voltage necessary for the wavelength tuning. The active region includes single or several heterojunction periods sandwiched between charge accumulation layers. Each of the active region periods comprises higher and lower affinity semiconductor layers with type-II band alignment. The charge carrier accumulation in the charge accumulation layers results in electric field build-up and leads to the formation of generally triangular electron and hole potential wells in the higher and lower affinity layers. Nonequillibrium carriers can be created in the active region by means of electrical injection or optical pumping. The ground state energy in the triangular wells and the radiation wavelength can be tuned by changing the voltage drop across the active region. |
| 公开日期 | 2011-01-25 |
| 申请日期 | 2005-08-18 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42315]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MAXION TECHNOLOGIES, INC. |
| 推荐引用方式 GB/T 7714 | BELENKY, GREGORY,BRUNO, JOHN D.,KISIN, MIKHAIL V.,et al. Semiconductor light source with electrically tunable emission wavelength. US7876795. 2011-01-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。