埋込み構造半導体レ-ザの製造方法
文献类型：专利
| 作者 | 近藤 康洋; 板屋 義夫; 今村 義宏; 大石 護 |
| 发表日期 | 1995-02-01 |
| 专利号 | JP1995010019B2 |
| 著作权人 | 日本電信電話株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 埋込み構造半導体レ-ザの製造方法 |
| 英文摘要 | PURPOSE:To remove the influence of abnormal growth, near a mesa, which is specific to the vapor phase growth and which is caused by a transport phenomenon of a gas by a method wherein, after a growth process by an MOVPE method has been executed on a semiconductor substrate containing a mesa region of the multilayer structure composed of an active layer, a clad layer and a stencil layer, the stencil layer is removed. CONSTITUTION:A laminate composed of a semiconductor layer 4 of a second conductivity type and a semiconductor layer 5 of a first conductivity type is grown by a metal organic vapor phase epitaxial method on a semiconductor substrate 1, of the first conductivity type, containing a mesa region of multilayer structure composed of an active layer 2, a clad layer 3 and a stencil layer 8; the height of the laminate which has been grown on the semiconductor substrate 1, of the first conductivity type, other than said mesa region is made equal to the lower face of the stencil layer 8. After that, the stencil layer B is removed selectively; the laminate deposited on the upper face of the stencil layer 8 is removed; the surface is made flat. By this method, a semiconductor laser of buried structure can be made without causing the abnormal growth near the mesa by the metal organic vapor phase epitaxial method which can grow an epitaxial film whose composition and film thickness are uniform over a wide area. |
| 公开日期 | 1995-02-01 |
| 申请日期 | 1987-01-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42324]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電信電話株式会社 |
| 推荐引用方式 GB/T 7714 | 近藤 康洋,板屋 義夫,今村 義宏,等. 埋込み構造半導体レ-ザの製造方法. JP1995010019B2. 1995-02-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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