Composite resonator-type semiconductor laser device
文献类型：专利
| 作者 | TOKUDA, YASUNORI; FUJIWARA, KENZO |
| 发表日期 | 1988-11-29 |
| 专利号 | US4788689 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Composite resonator-type semiconductor laser device |
| 英文摘要 | At least a portion of the optical waveguide is formed in a superlattice structure or in a quantum well structure, and crystals are mixed in the portions of the superlattice structure or the quantum well structure that divide the resonator to decrease the refractive index of these portions, in order to form two or more laser portions having different cavity lengths. The semiconductor device can be formed easily and precisely without employing cleavage which involves cumbersome manufacturing steps. Further, the crystal need not be grown on the groove but may simply be grown on a flat surface, making it possible to easily and precisely produce the semiconductor laser device. |
| 公开日期 | 1988-11-29 |
| 申请日期 | 1986-02-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42325]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | TOKUDA, YASUNORI,FUJIWARA, KENZO. Composite resonator-type semiconductor laser device. US4788689. 1988-11-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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