Semiconductor light emitting device, its manufacturing method and optical recording and/or reproducing apparatus
文献类型：专利
| 作者 | ISHIBASHI, AKIRA; TANIGUCHI, SATOSHI; HINO, TOMONORI; KOBAYASHI, TAKASHI; NAKANO, KAZUSHI; NAKAYAMA, NORIKAZU |
| 发表日期 | 1999-04-27 |
| 专利号 | US5898662 |
| 著作权人 | SONY CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor light emitting device, its manufacturing method and optical recording and/or reproducing apparatus |
| 英文摘要 | A semiconductor light emitting device comprises: a compound semiconductor substrate; an n-type cladding layer on the compound semiconductor substrate; an active layer on the n-type cladding layer; a p-type cladding layer on the active layer: and a p-type contact layer on the p-type cladding layer, the n-type cladding layer, the active layer, the p-type cladding layer and the p-type contact layer being made of II-VI compound semiconductors containing at least one of group II elements selected from the group consisting of Zn, Cd, Mg, Hg and Be and at least one of group VI elements selected from the group consisting of S, Se, Te and O, characterized in that at least the active layer has undulations and at least the p-type layer is flat. A method for manufacturing a semiconductor light emitting device having: a compound semiconductor substrate; an n-type cladding layer on the compound semiconductor substrate; an active layer on the n-type cladding layer; and a p-type cladding layer on the active layer, the n-type cladding layer, the active layer and the p-type cladding layer being made of II-VI compound semiconductors containing at least one of group II elements selected from the group consisting of Zn, Cd, Mg, Hg and Be and at least one of group VI elements selected from the group consisting of S, Se, Te and O, characterized in that the n-type cladding layer, the active layer and said p-type cladding layer are grown by varying, for the respective layers, the ratio of the molecular beam intensity of the group VI element relative to the molecular beam intensity of the group II element. |
| 公开日期 | 1999-04-27 |
| 申请日期 | 1997-11-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42327]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORPORATION |
| 推荐引用方式 GB/T 7714 | ISHIBASHI, AKIRA,TANIGUCHI, SATOSHI,HINO, TOMONORI,et al. Semiconductor light emitting device, its manufacturing method and optical recording and/or reproducing apparatus. US5898662. 1999-04-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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