Monolithic semiconductor light emitter and amplifier
文献类型：专利
| 作者 | CARLSON, NILS W. |
| 发表日期 | 1992-07-14 |
| 专利号 | US5131001 |
| 著作权人 | TRUMPF PHOTONICS, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Monolithic semiconductor light emitter and amplifier |
| 英文摘要 | A semiconductor light emitter comprising a substrate of a semiconductor material having a pair of opposed surfaces and a body of semiconductor material on one of the surfaces. The body includes a pair of clad layers of opposite conductivity types having an intermediate quantum well region therebetween. The clad layers are of a semiconductor material which forms a heterojunction with the material of the quantum well region. The clad layers and the quantum well region form a waveguide which extends along the body. A plurality of gain sections are formed in the body spaced along and optically coupled by the waveguide. Each of the gain sections is adapted to generate light therein when a voltage is placed thereacross. One of the gain section has gratings at each end thereof which are adapted to reflect light back into the one gain section and thereby create a beam of light. The grating between the one gain section and an adjacent gain section is adapted to allow some of the light generated in the one gain section to pass therethrough along the waveguide to the next gain section. Each of the other gain sections have gratings adjacent an end opposite the first gain sections. The periods of the grating are such that no self-oscillation of the light in the waveguide occurs so that each of the other gain sections serve as single pass amplifiers. The gratings also direct the amplified light from the other gain sections out of the body. |
| 公开日期 | 1992-07-14 |
| 申请日期 | 1990-12-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42328]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TRUMPF PHOTONICS, INC. |
| 推荐引用方式 GB/T 7714 | CARLSON, NILS W.. Monolithic semiconductor light emitter and amplifier. US5131001. 1992-07-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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