Semiconductor laser device, optical disk apparatus and optical integrated unit
文献类型：专利
| 作者 | KUME, MASAHIRO; KIDOGUCHI, ISAO; BAN, YUZABURO; MIYANAGA, RYOKO; SUZUKI, MASAKATSU |
| 发表日期 | 2006-08-15 |
| 专利号 | US7092423 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device, optical disk apparatus and optical integrated unit |
| 英文摘要 | A semiconductor laser device includes: a first cladding layer, which is made of a nitride semiconductor of a first conductivity type and is formed over a substrate; an active layer, which is made of another nitride semiconductor and is formed over the first cladding layer; and a second cladding layer, which is made of still another nitride semiconductor of a second conductivity type and is formed over the active layer. A spontaneous-emission-absorbing layer, which is made of yet another nitride semiconductor of the first conductivity type and has such an energy gap as absorbing spontaneous emission that has been radiated from the active layer, is formed between the substrate and the first cladding layer. |
| 公开日期 | 2006-08-15 |
| 申请日期 | 2004-05-25 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42331]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | KUME, MASAHIRO,KIDOGUCHI, ISAO,BAN, YUZABURO,et al. Semiconductor laser device, optical disk apparatus and optical integrated unit. US7092423. 2006-08-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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