Ridge waveguide semiconductor laser diode
文献类型：专利
| 作者 | OHKUBO, MICHIO; IKEGAMI, YOSHIKAZU; NAMEGAYA, TAKESHI; KASUKAWA, AKIHIKO |
| 发表日期 | 2003-05-06 |
| 专利号 | US6560260 |
| 著作权人 | FURUKAWA ELECTRIC CO., LTD., THE |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Ridge waveguide semiconductor laser diode |
| 英文摘要 | A GaAs based semiconductor laser has a combination of cladding layers including a ridge structure part and a remaining part sandwiching therebetween an etch stop layer. The remaining part overlies the entire surface of laser active layers and has a thickness "D" which satisfies D>=Wx0.5 wherein W is the width of a spot size having a strength of 1/e2 for a near field pattern in the active layer in a direction perpendicular to the active layer, wherein "e" is the bottom of the natural logarithm. |
| 公开日期 | 2003-05-06 |
| 申请日期 | 1998-11-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42338]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO., LTD., THE |
| 推荐引用方式 GB/T 7714 | OHKUBO, MICHIO,IKEGAMI, YOSHIKAZU,NAMEGAYA, TAKESHI,et al. Ridge waveguide semiconductor laser diode. US6560260. 2003-05-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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