Integrated semiconductor laser and waveguide device
文献类型：专利
| 作者 | BERRY, GRAHAM MICHAEL; BOOIJ, WILFRED; SILVER, MARK |
| 发表日期 | 2005-08-30 |
| 专利号 | US6937632 |
| 著作权人 | AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Integrated semiconductor laser and waveguide device |
| 英文摘要 | A buried heterojunction laser optically coupled with a buried waveguide electro-absorption (EA) optical modulator via an active layer is fabricated on a substrate carrying a number of deposited semiconductor layers. The laser component includes a laser current conduction region and an adjacent laser current confinement region. The waveguide component includes a waveguide current confinement region comprising first and second current blocking structures formed from different grown semiconductor layers. An extension of the first current blocking structure is interposed between the second current blocking structure and the waveguide current conduction region. Because each of the components is flanked by current confinement regions of differing structures, the resistive and capacitative properties of the current confinement regions can be selected to optimise the performance of that component for a particular use. |
| 公开日期 | 2005-08-30 |
| 申请日期 | 2003-06-12 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42339]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED |
| 推荐引用方式 GB/T 7714 | BERRY, GRAHAM MICHAEL,BOOIJ, WILFRED,SILVER, MARK. Integrated semiconductor laser and waveguide device. US6937632. 2005-08-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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