中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor laser with ZnMgSSe cladding layers

文献类型:专利

作者OKUYAMA, HIROYUKI; AKIMOTO, KATSUHIRO; MIYAJIMA, TAKAO; OZAWA, MASAFUMI; MORINAGA, YUKO; HIEI, FUTOSHI; NAKANO, KAZUSHI; OHATA, TOYOHARU
发表日期1996-05-07
专利号US5515393
著作权人SONY CORPORATION
国家美国
文献子类授权发明
其他题名Semiconductor laser with ZnMgSSe cladding layers
英文摘要A semiconductor laser using a II-VI compound semiconductor as the material for cladding layers, capable of emitting a blue to green light is disclosed. In an aspect of the semiconductor laser, an n-type ZnSe buffer layer, an n-type ZnMgSSe cladding layer, an active layer made of, for example, ZnCdSe, a p-type ZnMgSSe cladding layer and a p-type ZnSe contact layer are stacked in sequence on an n-type GaAs substrate. A p-side electrode such as an Au/Pd electrode is provided in contact with the p-type ZnSe contact layer. An n-side electrode such as an In electrode is provided on the back surface of the n-type GaAs substrate. In another aspect of the semiconductor laser, an n-type optical guiding layer made of ZnSSe, ZnMgSSe or ZnSe is provided between the n-type ZnMgSSe cladding layer and the active layer, and a p-type optical guiding layer made of ZnSSe, ZnMgSSe or ZnSe is provided between the p-type ZnMgSSe cladding layer and the active layer.
公开日期1996-05-07
申请日期1993-08-04
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/42342]  
专题半导体激光器专利数据库
作者单位SONY CORPORATION
推荐引用方式
GB/T 7714
OKUYAMA, HIROYUKI,AKIMOTO, KATSUHIRO,MIYAJIMA, TAKAO,et al. Semiconductor laser with ZnMgSSe cladding layers. US5515393. 1996-05-07.

入库方式: OAI收割

来源:西安光学精密机械研究所

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