Semiconductor laser with ZnMgSSe cladding layers
文献类型:专利
作者 | OKUYAMA, HIROYUKI; AKIMOTO, KATSUHIRO; MIYAJIMA, TAKAO; OZAWA, MASAFUMI; MORINAGA, YUKO; HIEI, FUTOSHI; NAKANO, KAZUSHI; OHATA, TOYOHARU |
发表日期 | 1996-05-07 |
专利号 | US5515393 |
著作权人 | SONY CORPORATION |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Semiconductor laser with ZnMgSSe cladding layers |
英文摘要 | A semiconductor laser using a II-VI compound semiconductor as the material for cladding layers, capable of emitting a blue to green light is disclosed. In an aspect of the semiconductor laser, an n-type ZnSe buffer layer, an n-type ZnMgSSe cladding layer, an active layer made of, for example, ZnCdSe, a p-type ZnMgSSe cladding layer and a p-type ZnSe contact layer are stacked in sequence on an n-type GaAs substrate. A p-side electrode such as an Au/Pd electrode is provided in contact with the p-type ZnSe contact layer. An n-side electrode such as an In electrode is provided on the back surface of the n-type GaAs substrate. In another aspect of the semiconductor laser, an n-type optical guiding layer made of ZnSSe, ZnMgSSe or ZnSe is provided between the n-type ZnMgSSe cladding layer and the active layer, and a p-type optical guiding layer made of ZnSSe, ZnMgSSe or ZnSe is provided between the p-type ZnMgSSe cladding layer and the active layer. |
公开日期 | 1996-05-07 |
申请日期 | 1993-08-04 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/42342] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | SONY CORPORATION |
推荐引用方式 GB/T 7714 | OKUYAMA, HIROYUKI,AKIMOTO, KATSUHIRO,MIYAJIMA, TAKAO,et al. Semiconductor laser with ZnMgSSe cladding layers. US5515393. 1996-05-07. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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