中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
多点発光型半導体レーザ装置

文献类型:专利

作者服部 亮; 香川 仁志; 森 方貴
发表日期1995-05-31
专利号JP1995050814B2
著作权人三菱電機株式会社
国家日本
文献子类授权发明
其他题名多点発光型半導体レーザ装置
英文摘要PURPOSE:To make the wavelength difference between a low power reading beam and a high power writing beam small by a method wherein a first light emitting region of a coating film deposited on a rear end face and a second light emitting region of a coating film deposited on a front and a rear end face are provided. CONSTITUTION:A light emitting front end face 1 of a laser diode A and a light emitting front end face 2 of a laser diode B are formed. A resonator front end face coating film 13 of the laser diode A whose reflectivity is 1-4%, a resonator front end face coating film 14 of laser diode B whose reflectivity is 25-33%, a resonator rear end face coating film 15 of the laser diode A whose reflectivity is 50-65%, and a resonator rear end face coating film 10 of the laser diode B whose reflectivity is 25-33% are formed. By this setup, the injection currents of the laser diodes A and B are separated from each other. As mentioned above, a laser device of this design is so constituted as to be provided with light emitting regions, whereby the wavelength difference between the optical outputs of a first and a second light emitting region set to 18-20mW and 2-4mW required for a writing and a reading light source respectively can be made small to be 2nm or less.
公开日期1995-05-31
申请日期1988-09-27
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/42343]  
专题半导体激光器专利数据库
作者单位三菱電機株式会社
推荐引用方式
GB/T 7714
服部 亮,香川 仁志,森 方貴. 多点発光型半導体レーザ装置. JP1995050814B2. 1995-05-31.

入库方式: OAI收割

来源:西安光学精密机械研究所

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