Semiconductor laser diode device and method of fabrication thereof
文献类型：专利
| 作者 | KITAMURA, SHOTARO |
| 发表日期 | 2013-07-02 |
| 专利号 | US8477819 |
| 著作权人 | RENESAS ELECTRONICS CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser diode device and method of fabrication thereof |
| 英文摘要 | Disclosed is a distributed feedback semiconductor laser diode device capable of operating at a high output ratio of forward/backward optical power while ensuring satisfactory stability of single-mode oscillation. The distributed feedback semiconductor laser diode device is configured to include a diffraction grating formed in an optical waveguide thereof. In a partial region of the optical waveguide, there is formed an alternately repetitive pattern of a grating part possessing a distributive refractivity characteristic and a no-grating space part possessing a uniform refractivity characteristic. The no-grating space part possessing a uniform refractivity characteristic has an optical path length that is half an integral multiple of a wavelength of laser oscillation, and the grating part possessing a distributive refractivity characteristic includes at least five grating periods. |
| 公开日期 | 2013-07-02 |
| 申请日期 | 2010-11-22 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42349]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | RENESAS ELECTRONICS CORPORATION |
| 推荐引用方式 GB/T 7714 | KITAMURA, SHOTARO. Semiconductor laser diode device and method of fabrication thereof. US8477819. 2013-07-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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