Semiconductor system having a ring laser fabricated by epitaxial layer overgrowth
文献类型：专利
| 作者 | TAN, MICHAEL R. T.; CORZINE, SCOTT W.; BOUR, DAVID P. |
| 发表日期 | 2009-03-10 |
| 专利号 | US7502405 |
| 著作权人 | AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor system having a ring laser fabricated by epitaxial layer overgrowth |
| 英文摘要 | The present invention provides a ring laser system comprising forming an optical core by an epitaxial layer overgrowth over an intermediate layer, forming multi-quantum wells adjacent to the optical core and forming an outer structure further comprising a total internal reflector, wherein forming photons within the multi-quantum wells further comprises circulating the photons within the ring laser structure comprising the outer structure, the multi-quantum wells, and the optical core. |
| 公开日期 | 2009-03-10 |
| 申请日期 | 2005-08-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42352]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD. |
| 推荐引用方式 GB/T 7714 | TAN, MICHAEL R. T.,CORZINE, SCOTT W.,BOUR, DAVID P.. Semiconductor system having a ring laser fabricated by epitaxial layer overgrowth. US7502405. 2009-03-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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