Epitaxial wafer and compound semiconductor light emitting device, and methods of fabricating the same
文献类型：专利
| 作者 | MIURA, YOSHIKI; MATSUBARA, HIDEKI; SEKI, HISASHI; KOUKITU, AKINORI |
| 发表日期 | 1999-01-26 |
| 专利号 | US5864573 |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Epitaxial wafer and compound semiconductor light emitting device, and methods of fabricating the same |
| 英文摘要 | A compound semiconductor light emitting device having a long life and high performance and a method for industrially fabricating the same are provided. The compound semiconductor light emitting device includes a GaP substrate, a buffer layer consisting of InN which is formed on the substrate, a relaxation layer consisting of InxGa1-xN which is formed on the buffer layer, and a luminescent layer consisting of InkGa1-kN which is formed on the relaxation layer. In this description, k represents a constant value within the range of 0 |
| 公开日期 | 1999-01-26 |
| 申请日期 | 1996-04-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42356]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 推荐引用方式 GB/T 7714 | MIURA, YOSHIKI,MATSUBARA, HIDEKI,SEKI, HISASHI,et al. Epitaxial wafer and compound semiconductor light emitting device, and methods of fabricating the same. US5864573. 1999-01-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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